Design of Tunnel FET and its Performance characteristics with various materials

--In today’s technological environment, there is a huge demand for devices with low power and low cost storage space. Memories with low power are driving the entire VLSI industry as most of the devices work on remote power supply. Demand of low power becomes the key of VLSI designs rather than high speed, particularly in embedded SRAM’s and caches. The tunneling field effect transistor uses the quantum mechanical generation of carriers by band-to-band tunneling. Tunneling FET meets the challenges like low Subthreshold Swing (SS), low supply voltage and lower leakage currents. In particular, in this paper, we designed Tunnel FET with different materials such as Si and SiGe in different regions so as to produce low subthreshold swing, low leakage currents, low supply voltages and comparable IOFF and ION Idealized template devices were used to determine the device unidirectionality, which is inherent to TFETs. TFET with different material is used to investigate the VDD range, in which TFETS may be advantageous when compared to conventional MOSFET. Ambipolarity of TFET was analyzed. Realistic device templates extracted from experimental data of fabricated state-of-the-art Silicon n-TFET was used to assess the performance gap between the simulation of idealized TFETs and the best experimental implementations with different materials